کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
79950 49370 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
چکیده انگلیسی

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the short-circuit currents (ISC) and open-circuit voltages (VOC) are simulated. The damage coefficients of minority carrier diffusion length (KL) and the carrier removal rate of base carrier concentration (RC) of each sub-cell are also estimated. The values of ISC and VOC obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 768–773
نویسندگان
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