کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79960 | 49370 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microcrystalline-silicon thin films prepared by chemical transport deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microcrystalline-silicon thin films prepared by chemical transport deposition Microcrystalline-silicon thin films prepared by chemical transport deposition](/preview/png/79960.png)
چکیده انگلیسی
We have investigated on the production of microcrystalline-silicon (μc-Si) films from solid Si sources by the chemical transport deposition, and could obtain photo-sensitive μc-Si films. The crystallinity and photo-sensitivity of μc-Si films are improved by increasing hydrogen pressure and the highest photo-sensitivity of 50 times is obtained at 200 Pa. The high density of atomic hydrogen probably causes the defect passivation in the high-pressure conditions. The distance between the Si target and the substrate is also important to improve the film properties, and a shorter distance is effective for higher deposition rate, crystallinity and photo-sensitivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 816–819
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 816–819
نویسندگان
Yuki Tomita, Masao Isomura,