کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7997013 | 1516211 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure and thermoelectric properties of Pb-based half-Heusler compounds: ABPb (AÂ =Â Hf, Zr; BÂ =Â Ni, Pd)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic structure and thermoelectric properties of half-Heusler ABPb (AÂ =Â Hf, Zr; BÂ =Â Ni, Pd) compounds were investigated by the first-principles calculation. Our results indicate all the four compounds are narrow-gap semiconductors. The value of power factor over relaxation time (S2Ï/Ï) first increases and then decreases with carrier concentration increasing, because of the narrower band gap. The optimal p- or n-type doping concentrations with different temperature have been estimated. Comparing with the experimental data of ZrNiPb, we get the thermopower S, power factor S2Ï and the maximum power factor as a function of carrier concentration and temperature. Our calculated power factors are in good agreement with the experimental data, and give some suggestions to improve the thermoelectric properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 682, 15 October 2016, Pages 375-380
Journal: Journal of Alloys and Compounds - Volume 682, 15 October 2016, Pages 375-380
نویسندگان
Guangtao Wang, Dongyang Wang,