کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7997972 | 1516246 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack](/preview/png/7997972.png)
چکیده انگلیسی
Sputtering-derived HfO2 high-k gate dielectric thin films have been deposited on Si substrate by means of high vacuum physics vapor deposition method. Via characterization from x-ray photoelectron spectroscopy (XPS) and electrical measurements, the effect of post-deposition annealing temperature on the interfacial and electrical properties of HfO2/Si gate stack has been investigated. XPS analyses show that an interfacial layer between HfO2 and silicon substrate has been found in the post-deposition annealing process. Increase in Hf-silicate layer and reduction in SiO2 low-k interface layer have been detected. Electrical measurements of MOS capacitor based on Al/HfO2/Si gate stacks indicate that annealing HfO2 sample at 300 °C demonstrated the improved electrical performance. As a result, the leakage current of 3.60 Ã 10â5 A/cm2 at applied substrate voltage of 2 V, which is much lower than those samples annealed at other temperature, has been obtained. The leakage current mechanism for different annealing temperature has been discussed systematically.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 647, 25 October 2015, Pages 322-330
Journal: Journal of Alloys and Compounds - Volume 647, 25 October 2015, Pages 322-330
نویسندگان
J. Gao, G. He, J.W. Zhang, B. Deng, Y.M. Liu,