کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7998651 | 1516249 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al-N co-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al-N co-doping Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al-N co-doping](/preview/png/7998651.png)
چکیده انگلیسی
Al doped ZnO (ZnO:Al) and Al-N co-doped ZnO (ZnO:Al-N) films were synthesized based on plasma assisted reactive deposition of ZnO matrix and in-situ doping of Al or co-doping of Al and N. Similar with undoped ZnO, the synthesized ZnO:Al and ZnO:Al-N films are hexagonal wurtzite in structure and exhibit high optical transparency in a wide spectral region. Al doping and Al-N co-doping in ZnO result in a significant variation of the optical properties in the ultraviolet (UV) region and an UV extension of the transparent range. Compared with undoped ZnO, the doped films show blue-shifted absorption edge of 320Â nm and widened band gap of 3.69Â eV after annealing in H2/N2 mixed gas because of the incorporation of dopants and the improvement in the crystal structure. The ZnO:Al film exhibits declined transparency in the near infrared (IR) region, while the ZnO film co-doped with Al and N preserves high transparency from near UV to medium IR in addition to the UV extension of the transparent range. The annealed ZnO:Al and ZnO:Al-N films show better electrical properties than those of the undoped ZnO film and the as-deposited doped ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 644, 25 September 2015, Pages 528-533
Journal: Journal of Alloys and Compounds - Volume 644, 25 September 2015, Pages 528-533
نویسندگان
Qinghu You, Hua Cai, Zhigao Hu, Peipei Liang, Slawomir Prucnal, Shengqiang Zhou, Jian Sun, Ning Xu, Jiada Wu,