کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79996 | 49370 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer](/preview/png/79996.png)
چکیده انگلیسی
Microcrystalline silicon (μc-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18–24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying μc-Si to n–i–p solar cells, short-circuit current density (JSC) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 980–983
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 980–983
نویسندگان
Yasushi Sobajima, Mitsutoshi Nishino, Taiga Fukumori, Masanori Kurihara, Takuya Higuchi, Shinya Nakano, Toshihiko Toyama, Hiroaki Okamoto,