کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7999632 | 1516265 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The photoluminescence of Gd-doped GaN multi-quantum wells (MQWs) is presented and discussed considering the formation of a Gd3+:Nitrogen-vacancy (N-vacancy) complex. A lower energy photoluminescence peak was observed for the Gd-doped GaN MQW sample with respect to the main peak assigned to a neutral donor bound exciton (D0X) of the undoped GaN MQW sample. The X-ray absorption near edge structure spectrum observed at Gd LIII-edge indicates a nitrogen vacancy adjacent to the Gd substituting the Ga ion in Gd-doped GaN MQW sample. Local stresses around the Gd dopants in Gd-doped GaN matrix generated due to the larger diameter of the Gd3+ ion with respect to the Ga3+ ion can be relieved by the creation of vacancies. The lower formation energy of N-vacancies in GaN matrix introduce them as a preferred candidate to relieve the generated stresses. A Gd3+:N-vacancy complex consisting of a Gd3+ ion and the created nitrogen vacancy adjacent to the Gd3+ dopant is likely to form in GaN:Gd matrix. The lower photoluminescence peak energy observed in the Gd-doped GaN MQW sample is assigned to the recombination of an exciton captured at the Gd3+:N-vacancy complex forming a small polaron-like state. A model is presented considering the small exciton-polaron population in defect sites captured around the Gd3+ ions in the Gd-doped GaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 628, 15 April 2015, Pages 401-406
Journal: Journal of Alloys and Compounds - Volume 628, 15 April 2015, Pages 401-406
نویسندگان
Mohamed Almokhtar, Shuichi Emura, Akihiro Koide, Takashi Fujikawa, Hajime Asahi,