Superparamagnetism, magnetoresistance and anomalous Hall effect in amorphous MnxSi1−x semiconductor films

(a) The Hall resistivity ρxy(H) measured at different temperatures and the M(H) hysteresis loops at 5 K for the Mn0.48Si0.52 film with a thickness of 20 nm. (b) The relationship between ρxy and M obtained by using the data in Figs. 4(a) and 2(a). (c) The relationship between the anomalous Hall coefficient Rs and the longitudinal resistivity ρxx.79