Nitridation effects of Si(1Â 1Â 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

The morphology evolution of InN nanorods in samples (g)-(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods.