کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80014 | 49370 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications](/preview/png/80014.png)
چکیده انگلیسی
Preparation of intrinsic hydrogenated amorphous silicon carbide (i-a-SiC:H) thin films for use as a top cell of triple junction solar cells is presented. These films were deposited using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with monomethyl silane (MMS) gas as the carbon source. Deposition conditions were explored to obtain films with a wide gap and low defect density. It was confirmed that the hydrogen dilution ratio plays an important role in enhancing the film properties. Employing a-SiC:H film as an intrinsic layer of single junction cell, open-circuit voltage as high as 0.99 V has been achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 1056–1061
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 1056–1061
نویسندگان
Ihsanul Afdi Yunaz, Kenji Hashizume, Shinsuke Miyajima, Akira Yamada, Makoto Konagai,