Triple-axis X-ray reciprocal space mapping of InyGa1−yAs thermophotovoltaic diodes grown on (1 0 0) InP substrates

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of InyGa1−yAs/InP1−xAsx thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. In0.53Ga0.47As (Egap=0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In0.67Ga0.33As (Egap=0.6 eV) TPV diodes are grown on three-step InP1−xAsx (0