کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80105 | 49373 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation assisted design of a gallium phosphide n–p photovoltaic junction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulation assisted design of a gallium phosphide n–p photovoltaic junction Simulation assisted design of a gallium phosphide n–p photovoltaic junction](/preview/png/80105.png)
چکیده انگلیسی
A gallium phosphide photovoltaic junction is reported. Using a n–p structure, a gallium phosphide junction is grown on a gallium phosphide substrate by molecular beam epitaxy. Junction design is presented with measurements of the dark and light response. The light current was measured under an illumination of air mass (AM) 1.5. Without an anti-reflective coating, a Voc of 1.53 V and a Jsc of 0.959mA/cm2 is achieved at one-sun AM1.5 global. A simulation of the junction is presented with best-fit parameters. Strategies for efficiency improvements are discussed which yield a simulated Voc of 1.93 V and an AM 1.5 efficiency of 14% at 20 suns. Justification of a 51.3% efficient, ideal, multi-junction device is also presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 5, May 2010, Pages 865–868
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 5, May 2010, Pages 865–868
نویسندگان
Charles R. Allen, Jong-Hyeok Jeon, Jerry M. Woodall,