کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8012585 | 1517161 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity ofâ¯â¼62.1â¯mAâ¯Wâ1 andâ¯â¼2.1â¯Ãâ¯1011â¯cmâ¯Hz1/2â¯Wâ1, respectively. Time-response results indicate that the device could operate with the frequency up to 1â¯kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 17-20
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 17-20
نویسندگان
Anli Xu, Siwei Yang, Zhiduo Liu, Gongjin Li, Jiurong Li, Ya Li, Da Chen, Qinglei Guo, Gang Wang, Guqiao Ding,