Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence

Photoluminescence characterization of Czochralaski-grown Te-doped GaSb wafers is presented. Calculations of the photoluminescence line shape of Te-doped GaSb wafers at 77 K have been performed. It has been demonstrated that the photoluminescence line shape analysis can be used for the estimation of native defect concentration. The n-type wafers with the doping level from 2×1017 to 2×1018 cm−3 have been studied. The doping level obtained from the photoluminescence data is correlated with the results of the Hall mobility measurements. The native defect concentration has been obtained with the help of the developed analysis. A comparative study of photovoltaic cells manufactured from different wafers is presented. Changes in the recombination-related current flow components, spectral photoresponse curves and fill factor values reveal strong correlation with the obtained native defect concentration values.