Fabrication and characterization of CuO/ZnO:Al photo-diode prepared by spray pyrolysis method

CuO/ZnO:Al photo-diode has been fabricated by spray pyrolysis technique. The prepared sample characterized by FESEM images, XRD and UV-Visible spectra, also I-V measurements in dark and under illumination. We found that, the investigated layers have a polycrystalline structure with optical band gaps of 3.25 eV and 1.63 eV for ZnO and CuO layers, respectively. Electrical characterization of the sample showed a rectifying behavior in dark, with an ideality factor of 5.8 ± 0.1, and under illumination in reverse bias at 1.5 V, the photo-generated current was more than twice of its dark current.