کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80223 49378 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
چکیده انگلیسی

The degradation effects of the GaInP/GaAs/Ge triple-junction solar cells irradiated by <200 keV protons are investigated on the basis of the spectral response analysis and measurements of electric property. The experimental results show that with increasing proton fluence Isc, Voc and Pmax decrease obviously. The proton energy exhibits an important influence on the degradation effects of the triple-junction cells dependent on the proton penetration range in the cells. As the proton energy is lower than 100 keV, irradiation-induced damage occurs in the top cell, while the irradiation with proton energy higher than 100 keV causes damage mainly in the middle sub-cells. Comparing the changes in the electrical properties of the triple-junction cells, a conclusion can be made that the GaAs middle sub-cell plays a major role in leading to more severe degradation. In this case, the 170 keV protons are suggested to be used to evaluate the performance of the GaAs triple-junction solar cells, for they can produce more severe degradation effects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 12, December 2008, Pages 1652–1656
نویسندگان
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