کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80245 | 49379 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CuInTe2 and In-rich telluride chalcopyrites thin films obtained by electrodeposition techniques
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: CuInTe2 and In-rich telluride chalcopyrites thin films obtained by electrodeposition techniques CuInTe2 and In-rich telluride chalcopyrites thin films obtained by electrodeposition techniques](/preview/png/80245.png)
چکیده انگلیسی
In order to obtain single-phase thin films of the system Cu–In–Te with optoelectronic properties adequate for solar cells, electrodeposition techniques were used on substrates of molybdenum supported by glass. Different annealings in Te atmosphere have been done that affect the Te concentration and In/Cu atomic ratio. Single chalcopyrite phase appears in two ranges of composition where the In/Cu atomic ratio varies between 0.21–0.76 and 0.90–3.46, respectively. Morphology, cell lattice parameters and electrical resistance for single-phase samples depend strongly on the composition in the annealed samples. The cell parameters ranges are a=6.141–6.183 Å and c=12.201–12.375 Å.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 7, 16 April 2007, Pages 621–628
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 7, 16 April 2007, Pages 621–628
نویسندگان
J.L. Orts, R. Díaz, P. Herrasti, F. Rueda, E. Fatás,