کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80309 | 49381 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi2 or NiSi2 as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (Jsc) of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 6, 23 March 2007, Pages 534–538
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 6, 23 March 2007, Pages 534–538
نویسندگان
Joondong Kim, Wayne A. Anderson,