کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80368 | 49383 | 2009 | 10 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices](/preview/png/80368.png)
Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine.Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 9, September 2009, Pages 1572–1581