کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80389 49383 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Localized irradiation effects on tunnel diode transitions in multi-junction concentrator solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Localized irradiation effects on tunnel diode transitions in multi-junction concentrator solar cells
چکیده انگلیسی

Multi-junction concentrator solar cells incorporate tunnel diodes that undergo a transition from high-conductance tunneling to low-conductance thermal diffusion behavior, typically at threshold current densities of the order of 102–103 mA/mm2. We present experimental evidence of a prominent heretofore unrecognized dependence of threshold current density on the degree of localized irradiation, in different solar cell architectures. We also show that solar cells with non-uniform metallization can exhibit an additional spatial dependence to the tunnel diode threshold current density. These previously undiscovered phenomena – which should be observable in all non-uniformly irradiated photovoltaic tunnel diodes – are interpreted as being derived from the lateral spreading of excess majority carriers (analogous to current spreading in light-emitting diodes (LEDs)). The consequences for concentrator photovoltaics are addressed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 9, September 2009, Pages 1692–1695
نویسندگان
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