کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80517 | 49389 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GISAXS study of temperature evolution in nanostructured CeVO4 films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Cerium vanadate films on glass substrate were obtained by sol–gel process. The morphology of these nanostructured and porous films was studied by grazing-incidence small-angle X-ray scattering (GISAXS) at synchrotron ELETTRA, Trieste, Italy. The aim of the GISAXS study was to investigate the changes in grain sizes due to the temperature evolution with three different time intervals (5, 15 and 30 min) of annealing at 673 K. We found that the effects of the different times of annealing are different for surface and bulk properties of this V/Ce oxide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 14, 6 September 2007, Pages 1299–1304
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 14, 6 September 2007, Pages 1299–1304
نویسندگان
Aleksandra Turković, Bojan Orel, Magdy Lučić-Lavčević, Pavo Dubček, Zorica Crnjak Orel, Sigrid Bernstorff,