کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80517 49389 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
GISAXS study of temperature evolution in nanostructured CeVO4 films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
GISAXS study of temperature evolution in nanostructured CeVO4 films
چکیده انگلیسی

Cerium vanadate films on glass substrate were obtained by sol–gel process. The morphology of these nanostructured and porous films was studied by grazing-incidence small-angle X-ray scattering (GISAXS) at synchrotron ELETTRA, Trieste, Italy. The aim of the GISAXS study was to investigate the changes in grain sizes due to the temperature evolution with three different time intervals (5, 15 and 30 min) of annealing at 673 K. We found that the effects of the different times of annealing are different for surface and bulk properties of this V/Ce oxide.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 14, 6 September 2007, Pages 1299–1304
نویسندگان
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