کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80539 | 49390 | 2006 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Applying analytical and numerical methods for the analysis of microcrystalline silicon solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Applying analytical and numerical methods for the analysis of microcrystalline silicon solar cells Applying analytical and numerical methods for the analysis of microcrystalline silicon solar cells](/preview/png/80539.png)
چکیده انگلیسی
The results of numerical device simulations for p–i–n diodes and the closed-form expression of the current–voltage characteristics developed for p–n diodes are compared. It is shown that the closed-form expression correctly predicts the functional relationship between material parameters and device performance of p–i–n diodes. The ideality factor between 1 and 2 is analyzed in detail. The effect of the defect density, the intrinsic carrier concentration, the mobility and the built-in potential on device performance are demonstrated. These insights are applied to analyze microcrystalline silicon thin-film solar cells deposited by chemical vapor deposition at temperatures below 250 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3021–3030
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3021–3030
نویسندگان
T. Brammer, H. Stiebig,