Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure

We have studied the three-stage deposition process of CuIn1−xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x=0.3x=0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.