کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80583 | 49390 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure](/preview/png/80583.png)
چکیده انگلیسی
We have studied the three-stage deposition process of CuIn1−xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x=0.3x=0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3377–3384
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3377–3384
نویسندگان
K. Sakurai, R. Scheer, S. Nakamura, Y. Kimura, T. Baba, C.A. Kaufmann, A. Neisser, S. Ishizuka, A. Yamada, K. Matsubara, K. Iwata, P. Fons, H. Nakanishi, S. Niki,