کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80591 | 49390 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge](/preview/png/80591.png)
Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al2O3 layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al2O3 are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3438–3443