کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80594 | 49390 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural properties of phosphorous-doped polycrystalline silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural properties of phosphorous-doped polycrystalline silicon Structural properties of phosphorous-doped polycrystalline silicon](/preview/png/80594.png)
چکیده انگلیسی
The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, EL, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm−1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3456–3463
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3456–3463
نویسندگان
R. Saleh, N.H. Nickel,