Characterisation of micrometre-sized inversion layer emitters in crystalline Si

The electrical properties of micrometre-sized inversion-layer (IL) emitters in crystalline Si are investigated by measuring their current–voltage characteristics using a so-called NOSFET device. The IL emitter is induced by a SiN/SiO double-layer stack. We show that by scanning the surface with a negatively biased tip, the IL emitter below the tip can be controllably eliminated.