کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80680 | 49394 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrochemically deposited p–n homojunction cuprous oxide solar cells Electrochemically deposited p–n homojunction cuprous oxide solar cells](/preview/png/80680.png)
The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current–voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p–n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p–n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 1, January 2009, Pages 153–157