CuInxGa1−xSe2 thin films prepared by electron beam evaporation

CuInxGa1−xSe2 bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuInxGa1−xSe2 have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 °C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuInxGa1−xSe2 films exhibited sharp luminescence peaks corresponding to the band gap of the material.