The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors

The formation of the compound semiconductor CuInSe2 by laser annealing of electroplated precursor films in inert gas atmosphere represents an entire non-vacuum production process of thin-film solar cell absorbers. Besides this technological aspect, the impact of extreme annealing rates on structural properties of the resulting semiconductor is interesting from a fundamental research point of view. For this reason, we compared absorbers processed by laser annealing with absorbers annealed with moderate heating rates in the range of 1 K/s by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray analysis (EDX). All absorbers processed with laser or furnace annealing consist of crystalline CuInSe2 in the chalcopyrite crystal structure with a high degree of cation disorder. We show that laser annealing does not lead to unintentional selenium loss during the semiconductor formation process.