کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80831 49403 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination
چکیده انگلیسی

Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent circuits. Shockley–Read–Hall recombination at states on the device interfaces governs the cell dynamic response. Recombination process was modeled by means of simple RC circuits which allow to determine the capture rate of electrons and holes. Carrier lifetime is found to be stated by the electron capture time τSRH≈τn, and it results in the range of 300 μs. The Al-annealed back contact was regarded as the dominating recombination interface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 4, April 2008, Pages 505–509
نویسندگان
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