کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80881 | 49407 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition](/preview/png/80881.png)
چکیده انگلیسی
Zn1−xMgxO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 °C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 °C shows the lowest room-temperature resistivity of 5.16×10−4 Ω cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 °C. The probable mechanism is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 3, March 2008, Pages 343–347
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 3, March 2008, Pages 343–347
نویسندگان
Xiuquan Gu, Liping Zhu, Zhizhen Ye, Quanbao Ma, Haiping He, Yinzhu Zhang, Binghui Zhao,