کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80892 | 49409 | 2006 | 12 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Recombination losses in thin-film CdS/CdTe photovoltaic devices Recombination losses in thin-film CdS/CdTe photovoltaic devices](/preview/png/80892.png)
The losses accompanying the photoelectric energy conversion in thin-film CdS/CdTe devices faricated on the SnO2/glass substrates are analyzed. The extent to which the incomplete collection of the photogenerated carriers is determined by recombination at the CdS/CdTe interface and in the depletion layer is shown. The former is investigated based on the continuity equation with account made for surface recombination and the latter — from the Hecht equation. A comparison of the computed results and the experimental data shows that, in general, both types of recombination losses are essential but can be practically eliminated with a choice of appropriate barrier structure and material parameters, primarily of the carrier lifetime and the concentration of uncompensated impurities.
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2201–2212