کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80895 | 49409 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physical properties of Bi doped CdTe thin films grown by the CSVT method
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017–8×1018 cm−3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm−3. These are meaningful results for CdTe-based solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2228–2234
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2228–2234
نویسندگان
O. Vigil-Galán, J. Sastré-Hernández, F. Cruz-Gandarilla, J. Aguilar-Hernández, E. Marín, G. Contreras-Puente, E. Saucedo, C.M. Ruiz, V. Bermúdez, M. Tufiño-Velázquez,