کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80928 49409 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fluctuation model for p–n heterojunction solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Fluctuation model for p–n heterojunction solar cells
چکیده انگلیسی

Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage Voc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to barrier height fluctuation that are exponentially enhanced when dealing with barrier current. This results in some decrease of the Voc value. Three theoretical models of averaging open-circuit voltage were used. Experimental results on p+-AlxGa1−xAs/p+-n-GaAs heterostructure SC with various microrelief, obtained by the anisotropic chemical etching, are compared with theoretical calculations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2496–2500
نویسندگان
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