کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80928 | 49409 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fluctuation model for p–n heterojunction solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage Voc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to barrier height fluctuation that are exponentially enhanced when dealing with barrier current. This results in some decrease of the Voc value. Three theoretical models of averaging open-circuit voltage were used. Experimental results on p+-AlxGa1−xAs/p+-n-GaAs heterostructure SC with various microrelief, obtained by the anisotropic chemical etching, are compared with theoretical calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2496–2500
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2496–2500
نویسندگان
N.L. Dmitruk, O.Yu. Borkovskaya, I.B. Mamontova, E.V. Basiuk, J.M. Saniger Blesa,