کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80945 | 49410 | 2007 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Purification of MG silicon by thermal plasma process coupled to DC bias of the liquid bath
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The aim of this work is the purification of metallurgical grade silicon for photovoltaic applications using a thermal plasma process. In this study, the plasma treatment was combined with a DC bias of the liquid silicon to increase the kinetics of the impurities extraction. On-line measurement by optical emission spectroscopy (OES), ex-situ analysis by laser induced breakdown spectroscopy (LIBS) and ICP techniques allowed to demonstrate that elimination of cationic impurities (Fe, Al, Ca, etc.) increased when the positive bias increased. The ICP results show that a high positive bias leads to a purification factor of about 10 for most of the impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 20, 14 December 2007, Pages 1906–1915
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 20, 14 December 2007, Pages 1906–1915
نویسندگان
S. Rousseau, M. Benmansour, D. Morvan, J. Amouroux,