Complexing agent effect on the stoichiometric ratio of the electrochemically prepared CuInSe2 thin films

The electrodeposition of CuInSe2 is investigated to improve the stoichiometric properties of CuInSe2 layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe2 layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.