کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80984 | 49412 | 2007 | 5 صفحه PDF | دانلود رایگان |

Nanostructured nickel oxide (NiO) thin films were prepared using pulsed laser ablation technique on heated quartz substrates under an oxygen partial pressure of 2×10−3 mbar. X-ray diffraction (XRD) studies indicate enhancement in growth along (1 1 1) and (2 0 0) crystal planes with increase of substrate temperature. The atomic force microscopic (AFM) studies indicate a self-assembly of NiO nanocrystals having size ∼84 nm, with a uniform height profile along the assembly for films prepared at a substrate temperature of 673 K. Formation of arrays of confined two-dimensional NiO layers in the films prepared at a substrate temperature of 473 K is also reported. The optical band gap and electrical resistivity of the films synthesized under different deposition conditions are also discussed.
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issues 15–16, 22 September 2007, Pages 1505–1509