کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81055 | 49419 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier](/preview/png/81055.png)
چکیده انگلیسی
Al/p-Si/copper phthalocyanine photovoltaic device has been fabricated and characterised by current–voltage and capacitance–voltage measurements. Electrical properties of the device were determined by current–voltage characterizations under dark and illumination conditions. The density distribution of the interface states of the photodiode was found to vary from 8.88×1012 eV−1 cm−2 in Ess-0.54 eV to 4.51×1012 eV−1 cm−2 in Ess-0.61 eV. The device shows a photovoltaic behaviour with a maximum open circuit voltage Voc of 0.16 V and short-circuits current Isc of 0.45 μA under 3500 lux light intensity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 13, 15 August 2007, Pages 1182–1186
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 13, 15 August 2007, Pages 1182–1186
نویسندگان
Fahrettin Yakuphanoglu,