Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier

Al/p-Si/copper phthalocyanine photovoltaic device has been fabricated and characterised by current–voltage and capacitance–voltage measurements. Electrical properties of the device were determined by current–voltage characterizations under dark and illumination conditions. The density distribution of the interface states of the photodiode was found to vary from 8.88×1012 eV−1 cm−2 in Ess-0.54 eV to 4.51×1012 eV−1 cm−2 in Ess-0.61 eV. The device shows a photovoltaic behaviour with a maximum open circuit voltage Voc of 0.16 V and short-circuits current Isc of 0.45 μA under 3500 lux light intensity.