کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81062 | 49419 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of multicrystalline silicon solar cells by modified 3-diode equivalent circuit model taking leakage current through periphery into consideration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We proposed a modified 3-diode equivalent circuit model for analysis of multicrystalline silicon (Mc-Si) solar cells. By using this equivalent circuit model, we can precisely evaluate the characteristics of Mc-Si solar cells taking the influence of grain boundaries and large leakage current through the peripheries into consideration and extract electrical properties. The calculated value of current-voltage characteristics for small size (3 mm×3 mm) Mc-Si solar cells using this model completely agreed with the measured value at various cell temperatures. Moreover, the calculated open-circuit voltage (Voc) obtained by extracted parameters and measured Voc agreed well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 13, 15 August 2007, Pages 1222–1227
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 13, 15 August 2007, Pages 1222–1227
نویسندگان
Kensuke Nishioka, Nobuhiro Sakitani, Yukiharu Uraoka, Takashi Fuyuki,