کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81104 | 49422 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Three-stage growth of Cu–In–Se polycrystalline thin films by chemical spray pyrolysis
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Three-stage growth of Cu–In–Se polycrystalline thin films by chemical spray pyrolysis Three-stage growth of Cu–In–Se polycrystalline thin films by chemical spray pyrolysis](/preview/png/81104.png)
چکیده انگلیسی
Structural, optical and electrical properties of polycrystalline Cu–In–Se films, such as CuInSe2 and ordered vacancy compounds (OVC), prepared by three-stage process of sequential chemical spray pyrolysis (CSP) of In–Se (first stage), Cu–Se (second stage) and In–Se (third stage) solutions have been studied in terms of substrate temperature at the second stage (TS2). The films grown at TS2⩽420 °C exhibited larger grains in comparison with the Cu–In–Se films grown by the usual CSP method. Optical gap energy was approximately 1.06 eV for 360 °C⩽TS2⩽420 °C, but increased dramatically from 1.06 to 1.35 eV when the TS2 rose from 420 to 500 °C. Conductivity type was p-type for TS2<420 °C, but n-type for TS2>420 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 12, 23 July 2007, Pages 1152–1159
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 12, 23 July 2007, Pages 1152–1159
نویسندگان
Tomoaki Terasako, Seiki Inoue, Tetsuya Kariya, Sho Shirakata,