کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81129 | 49428 | 2007 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes](/preview/png/81129.png)
We demonstrate the effectiveness of using a high Ar+H2 dilution of GeH4, high pressure, and low substrate temperatures in producing device-grade a-Ge:H through standard radio-frequency glow discharge deposition. The enhanced plasma chemistry encourages the production, heating, and incorporation of nanoparticles to increase order, while the low substrate temperature encourages hydrogen incorporation to saturate dangling bonds. We utilize the material in nip photodiodes illuminated through the n-side, and demonstrate a device with an i-layer thickness of only 60 nm showing JSC=20.6 mA/cm2 (AM1.5 Efficiency=2.1%). Temperature-dependent conductivity and bias-dependent spectral response measurements suggest that a non-uniform field distribution and a defect-rich region near the i–p interface are currently the limiting factors for the device performance.
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 10, 15 June 2007, Pages 877–881