کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81131 | 49428 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor](/preview/png/81131.png)
چکیده انگلیسی
A set of In2Se3 films was grown on (1 1 1) Si substrate with AlN buffer by metalorganic chemical vapor deposition (MOCVD) using H2Se as the metalogramic precursors for Se. The In2Se3 films on (1 1 1) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase γ-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra of single-phase γ-In2Se3 show exciton emissions at 2.140 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.943 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 10, 15 June 2007, Pages 888–891
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 10, 15 June 2007, Pages 888–891
نویسندگان
D.Y. Lyu, T.Y. Lin, J.H. Lin, S.C. Tseng, J.S. Hwang, H.P. Chiang, C.C. Chiang, S.M. Lan,