کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81165 | 49432 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Assessment of a low-cost gold-free metallization for III–V high concentrator solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
A gold-free metallization is proposed to be used as the grid contact in III–V concentrator solar cells. This metallization is based on the Cu/Ge system which has been reported to attain very low specific contact resistances on n-GaAs. In this letter, we show that metal layers with low resistivity (13 μΩ cm) can be obtained if the copper content in the alloy is around 28% in weight for a wide range of annealing temperatures (400–450 °C). Finally, this metallization has been used to manufacture single-junction GaAs high concentrator solar cells. Efficiencies of 26.2% at 1000 suns have been reached.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 9, 23 May 2007, Pages 847–850
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 9, 23 May 2007, Pages 847–850
نویسندگان
Ignacio Rey-Stolle, Beatriz Galiana, Carlos Algora,