A new method of determination of series and shunt resistances of silicon solar cells

A new method of measurement of series resistance Rs and shunt resistance Rsh of a silicon solar cell is presented. The method is based on the single exponential model and utilizes the steady state illuminated I–V characteristics in third and fourth quadrants and the Voc–Isc characteristics of the cell. It enables determination of values of Rsh and Rs with the intensity of illumination. For determination of Rs it does not require Rsh to be assumed infinite and realistic values of Rsh can be used. The method is very convenient to use and in the present study it has been applied to silicon solar cells having finite values of Rsh. We have found that Rsh is independent of intensity but the Rs decreases with both the intensity of illumination and the junction voltage.