کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
812243 | 906110 | 2014 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon nanotube electronics: recent advances
ترجمه فارسی عنوان
الکترونیک کربن نانولوله: پیشرفت های اخیر
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
چکیده انگلیسی
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal materials for applications in electronic devices. Significant progress has been made on CNT electronics, and a doping-free approach has emerged from this research. This approach utilizes the contact control on the properties of field-effect transistors (FETs), preserving the perfect lattice of the CNT making it possible for CNT FETs to outperform state-of-the-art Si devices. Both n-type and p-type CNT FETs with near ballistic performance limits have been fabricated, symmetric CMOS devices have been demonstrated, and pass-transistor-logic, a circuit configuration that is more efficient than CMOS is being explored.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 17, Issue 9, November 2014, Pages 433–442
Journal: - Volume 17, Issue 9, November 2014, Pages 433–442
نویسندگان
Lian-Mao Peng, Zhiyong Zhang, Sheng Wang,