کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81238 | 49445 | 2006 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Passivation and etching of fine-grained polycrystalline silicon films by hydrogen treatment
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Here we investigated the effects of hydrogen treatment on highly defected polycrystalline silicon solar cells in terms of defects passivation and surface etching. The poly-Si films were formed by high-temperature chemical vapour deposition. The hydrogen treatment was carried out through deposition of a-SiNx:H layer followed by a thermal treatment or by direct hydrogen plasma. The deposition of silicon nitride layers on polysilicon cells led to a slight increase in the open-circuit voltage without damage to the surface. In contrast, after plasma hydrogenation, the results revealed an etching process of the emitter simultaneously with an important increase of the measured open-circuit voltage by a factor 2, reaching 420 mV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 14, 6 September 2006, Pages 2087–2098
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 14, 6 September 2006, Pages 2087–2098
نویسندگان
A. Slaoui, E. Pihan, I. Ka, N.A. Mbow, S. Roques, J.M. Koebel,