کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
81255 49448 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical characterization of a-C:N thin films deposited by RF sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Optical characterization of a-C:N thin films deposited by RF sputtering
چکیده انگلیسی

In this work we present the main results of the optical properties study of amorphous carbon nitride (a-C:N) thin films prepared by reactive radio frequency (RF) sputtering. The a-C:N films were deposited, at room temperature, onto glass substrates, from a graphite target, in a pure nitrogen plasma. During the deposition, the pressure of nitrogen and the power density were maintained at 10−2 mbar and 0.79 W cm−2, respectively. Optical properties of these films were deduced from optical transmission spectra in the ultraviolet–visible–near infrared (UV–Vis–NIR) range. The refractive index follows well the Cauchy law with an extrapolated value of 1.68 in the far IR region. The optical band gap of the a-C:N films is about 1.2 eV. This value is relatively high in comparison with that of amorphous carbon films (0.8 eV) obtained in similar conditions. The incorporation of nitrogen in the amorphous carbon network leads to an increase of the optical band gap.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 10, 15 June 2006, Pages 1424–1428
نویسندگان
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