کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81274 | 49450 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Survey of intermediate band materials based on ZnS and ZnTe semiconductors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A first-principles study, using the local spin density approximation, to design materials with an isolated partially filled intermediate band, based on a II–VI semiconductor is presented. These materials, with an intermediate band of a metallic character, are of great interest as new high-efficiency materials in solar cells. The study presented in this work is based on X108Zn107MX108Zn107M materials, where X=S, Te and M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni and Cu. The results show that the intermediate band is only present in some compounds. The electronic properties and the population analysis have been calculated and analyzed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 5, 23 March 2006, Pages 588–596
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 5, 23 March 2006, Pages 588–596
نویسندگان
C. Tablero,