کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81344 | 49470 | 2006 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Electric power generation using InGaAsSb and GaSb thermophotovoltaic (TPV) cells was investigated in a gas-fired heating furnace. Electric output characteristics of the TPV cells in the combustion-driven radiant sources are presented. For the InGaAsSb cells, open circuit voltage was higher than 300 mV at a short circuit current density above 1 A/cm2. The short circuit current of the InGaAsSb cells increased more rapidly than that of the GaSb cells in radiator temperature range 930–1215 °C. A mathematical model for the TPV devices was developed to describe the effect of cell bandgap and radiator temperature on electric power output and cell efficiency. Also, the design aspects of the combustion-driven TPV systems are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 1, 6 January 2006, Pages 68–81
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 1, 6 January 2006, Pages 68–81
نویسندگان
K. Qiu, A.C.S. Hayden, M.G. Mauk, O.V. Sulima,