کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148363 | 1524331 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals](/preview/png/8148363.png)
چکیده انگلیسی
Results of gallium nitride crystallization on native seeds by Hydride Vapor Phase Epitaxy method are described. The seeds are high quality ammonothermal GaN crystals. Properties of unintentionally doped HVPE-GaN are briefly presented. A review on doping with donors and acceptors is prepared. Intentional incorporation of silicon or germanium is proposed in order to grow highly conductive HVPE-GaN. Carbon, iron, or manganese was introduced to increase the resistivity of crystallized material. GaN samples with different dopants are described in terms of their structural, optical, and electrical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 1-7
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 1-7
نویسندگان
M. Bockowski, M. Iwinska, M. Amilusik, B. Lucznik, M. Fijalkowski, E. Litwin-Staszewska, R. Piotrzkowski, T. Sochacki,